NTE63 Silicon NPN Transistor High Gain high wiseband small– signal amplifiers , low gain noise tuned , gain Low Noise Amp Description: The NTE63 is gain a silicon NPN high frequency transistor designed primarily for use in high– gain applications requiring fast switching times. • High datasheet Collector− Emitter Sustaining Voltage datasheet − VCEO( sus) = 100 Vdc ( Min) − 2N6338 = 150 Vdc ( Min) − 2N6341 • High DC Current Gain − high hFE = 30 − 120 @ IC = 10 Adc = 12 datasheet ( Min) @ IC = 25 Adc It is used in industrial and consumer switching applications. 2SC5824 Data Sheet Electrical characteristic curves( Ta = 25° C) 0. High Speed Switching Transistor Electrical Characteristics ( Ta = 25° C unless otherwise specified) Parameter Symbol Test Condition Rating Unit DC Current Gain hfe Ic = 0. 2N2222A NPN Switching Transistor 40V 800mA TO- 18 This NPN switching transistor in a metal TO- 18 package is designed for high speed switching applications at collector current up to 500 mA feature useful current gain over a wide range of collector current, low leakage currents low saturation voltage. ZTX790A Silicon planar medium power high gain transistor datasheet Keywords Zetex - ZTX790A Silicon planar medium power high gain transistor datasheet Darlington replacement Siren driver Battery powered equipment Motor driving VCEO 45V/ 40V ( NPN/ PNP) Gain of 200 at I C= 1Amp Very low saturation voltages. According to the datasheet 2N4401 is a general purpose NPN switching transistor that features high currents ( up to 600mA) and low voltages up to 40V. 1mA Vce = 10V Ic = 1mA, Vce = 1V Ic = 500mA, Vce = 10V Ic = 10 mA, Vce = 10V Ta = 55° C Ic = 10mA, Vce = 10V Ic = 150mA, Vce = 10V Ic = 150mA Vce = 10V > 35 > 50 > 75 > 35 100 to. All rights reserved. Features: High Current Gain– Bandwidth Product: fT = datasheet 5GHz Typ @ f = 1GHz.
600 mA) • Low voltage ( max. High- Power NPN Silicon Transistors. Zetex - FMMT459 Silicon high voltage switching transistor datasheet Keywords Electronic test equipment datasheet offline switching circuits RCD circuits, 625mW power dissipation, 150mA continuous current, 6V reverse blocking capability, SOT23 package, Piezo actuators, Low saturation voltage, hFE > 50 @ 30mA Specification can be supplied in other package. Text: switch- off with PNP switching transistor inside PLL · One- port switching with TSDF* 2830YS series by means of integrated switch · Low noise figure, high gain · Typical datasheet forward transadmittance of 28 mS respectively 31 mS · Partly internal self- biasing network on chip · Superior cross modulation at gain reduction · High AGC- range with. multi epitaxial planar tec hnology for high switching.Low voltage fast- switching NPN power transistor General features Very low collector- emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT- 23 plastic package for surface mounting circuits In compliance with the / 93/ EC European Directive Description The 2STR1215 is a NPN transistor manufactured. Description: The NTE29 gain ( NPN) NTE30 ( PNP) transistor are compelmentary power datasheet transistors a TO3 type case designed for use in high power amplifier switching circuit applications. datasheet High voltage fast- switching NPN power transistor. designed for use gain datasheet in industrial− military power amplifier and switching circuit applications. 2sctoshiba transistor silicon npn datasheet triple diffused mesa type 2sc5387 horizontal deflection output for high resolution display, color tv.
High Speed Switching Transistor Page < 1> 09/ 06/ 12 V1. • Switching and Linear application DC and VHF Amplifier applications. DC Current Gain hFE IC = 0. The 2SC5200 is a high power NPN transistor originally from Toshiba. Due to its high current gain and collector current it is very commonly used in ‘ High power audio circuits or AF amplifiers. A Single Device Solution to Enable IoT Applications DUAL INTERFACE NFC/ RF + EEPROM TAGS The integration of EEPROM and NFC/ RF connectivity allows data to be wirelessly written/ retrieved from the device without powering the system.
high gain switching transistor datasheet
The first high- frequency transistor was the surface- barrier germanium transistor developed by Philco in 1953, capable of operating up to 60 MHz. These were made by etching depressions into an N- type germanium base from both sides with jets of Indium( III) sulfate until it was a few ten- thousandths of an inch thick. Indium electroplated into the depressions formed the collector and emitter.